6 Patents
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- US117537412023Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size
Globalwafers Co., Ltd.
0 cites - US116680202023Systems and Methods for Production of Low Oxygen Content Silicon
Globalwafers Co., Ltd.
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