7 Patents
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- US124006912025Memory Device and Method for Training Per-pin Operation Parameters
Samsung Electronics Co., Ltd.
0 cites - US123944702025Semiconductor Chip Capable of Calibrating Bias Voltage Supplied to Write Clock Buffer Regardless of Process Variation and Temperature Variation, and Devices Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117994632023Duty Adjustment Circuit, and Delay Locked Loop Circuit and Semiconductor Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115689162023Multi-phase Clock Generator, Memory Device Including Multi-phase Clock Generator, and Method of Generating Multi-phase Clock of Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
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