Patents/Inventors

Fu-yuan Hsieh

New Taipei CityTW17 patents

9 Patents

US126045052026
Sic Trench MOSFET with an Embedded Junction Barrier Schottky Diode
NAMI MOS CO., Ltd.
0 cites
US124329662025
Shielded Gate Trench Mosfets with Improved Termination Structures
NAMI MOS CO., Ltd.
0 cites
US123289152025
Superfunction Mosfets Having Shielded Gate Trench Structures
NAMI MOS CO., Ltd.
0 cites
US122667262025
Shielded Gate Trench Mosfets with Improved Performance Structures
NAMI MOS CO., Ltd.
0 cites
US122680172025
Shielded Gate Trench Mosfets with Improved Trench Terminations and Shielded Gate Trench Contacts
NAMI MOS CO., Ltd.
0 cites
US122307052025
Shielded Gate Trench Mosfets with Improved Trench Terminations and Shielded Gate Trench Contacts
NAMI MOS CO., Ltd.
0 cites
US121763972024
Super Barrier Rectifier with Shielded Gate Electrode and Multiple Stepped Epitaxial Structure
NAMI MOS CO., Ltd.
0 cites
US117770002023
Sic Trench MOSFET with Low On-resistance and Switching Loss
NAMI MOS CO., Ltd.
0 cites
US116007252023
Trench Mosfets Integrated with Clamped Diodes Having Trench Field Plate Termination to Avoid Breakdown Voltage Degradation
NAMI MOS CO., Ltd.
0 cites