Patents/Inventors

Fu-ting Sung

Yangmei CityTW30 patents

20 Patents

US126159692026
Phase-change Memory Device with Tapered Thermal Transfer Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US126046772026
Semiconductor Device and Methods of Manufacturing
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125987562026
Phase Change Material (PCM) Switch Having Low Heater Resistance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125884292026
Resistive Memory Device Including a Silicon Oxide Base Spacer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US125076022025
RRAM with Post-patterned Treated Memory Films to Provide Improved Endurance Characteristics and Methods for Forming
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US123695032025
Encapsulated Phase Change Material Switch and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US123546952025
Trench Formation Scheme for Programmable Metallization Cell to Prevent Metal Redeposit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123027642025
In-situ Formation of a Spacer Layer for Protecting Sidewalls of a Phase Change Memory Element and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites
US122681022025
Horn Shaped Spacer for Memory Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122455282025
Memory Device with Composite Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122258292025
Semiconductor Structure, Electrode Structure and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US122180052025
Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121610572024
Method for Forming Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US119505232024
Memory Device, Memory Integrated Circuit and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118942672024
Method for Fabricating Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118008222023
Memory Device with Composite Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117858612023
Semiconductor Structure and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US117857862023
Trench Formation Scheme for Programmable Metallization Cell to Prevent Metal Redeposit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116372402023
Semiconductor Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US115814842023
Semiconductor Structure, Electrode Structure and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites