6 Patents
- US122728552025Semiconductor Device and Methods, Where First and Second Transmission Lines Are Surrounded by First and Second High-k Dielectric Materials
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122453612025Interconnect Structure Having Conductor Extending Along Dielectric Block
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US117372052023Interconnect Structure Having Conductor Extending Along Dielectric Block
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117110562023Method of Using Varainductor Having Ground and Floating Planes
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116645662023Semiconductor Device and Method, Where a Dielectric Material Directly Contacts a High-k Dielectric Material and First and Second Transmission Lines
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites