11 Patents
- US123809502025Non-volatile Static Random Access Memory (NVSRAM) with Multiple Magnetic Tunnel Junction Cells
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122436182025Method of Manufacturing Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122370502025Three-dimensional (3-D) Write Assist Scheme for Memory Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US119841642024Non-volatile Static Random Access Memory (nvsram) with Multiple Magnetic Tunnel Junction Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US116773872023Clock Circuit and Method of Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116578732023Non-volatile Static Random Access Memory (nvsram) with Multiple Magnetic Tunnel Junction Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116006262023Semiconductor Device Including Anti-fuse Cell
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites