3 Patents
- US119763612024Methods for Depositing a Transition Metal Nitride Film on a Substrate by Atomic Layer Deposition and Related Deposition Apparatus
ASM IP Holding B.V.
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- US118107882023Methods for Forming a Transition Metal Niobium Nitride Film on a Substrate by Atomic Layer Deposition and Related Semiconductor Device Structures
ASM IP Holding B.V.
0 cites