16 Patents
- US125573332026Semiconductor Power Device and Method of Manufacturing the Same
Infineon Technologies Austria AG
0 cites - US125573602026Lateral High Voltage Semiconductor Device and Method for Forming a Lateral High Voltage Semiconductor Device
Infineon Technologies Austria AG
0 cites - 0 cites
- 0 cites
- 0 cites
- US123826782025Transistor Arrangement with a Lateral Superjunction Transistor Device
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US121664832024Electronic Circuit with a Transistor Device and a Biasing Circuit
Infineon Technologies Austria AG
0 cites - US121193762024Power Semiconductor Device Having Vertically Parallel P-n Layers Formed in an Active Region Under Transistor Cells and Under a Non-depletable Extension Zone Formed in the Edge Region
Infineon Technologies Austria AG
0 cites - US120028042024Half-bridge Circuit Including Integrated Level Shifter Transistor
Infineon Technologies Austria AG
0 cites - 0 cites
- US118699662024Method for Forming an Insulation Layer in a Semiconductor Body and Transistor Device
Infineon Technologies Austria AG
0 cites - US117287902023Electronic Circuit Having a Transistor Device and a Biasing Circuit
Infineon Technologies Austria AG
0 cites - US116997252023Semiconductor Device Having an Alignment Layer with Mask Pits
Infineon Technologies Austria AG
0 cites - US116826952023Semiconductor Device Having a High Breakdown Voltage
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US116826962023Semiconductor Device Having a High Breakdown Voltage
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US116521372023Semiconductor Device with Drain Structure and Metal Drain Electrode
Infineon Technologies Austria AG
0 cites