5 Patents
- 0 cites
- US121989732025Integrated Circuit Comprising Trenches Formed in a Substrate
Stmicroelectronics (Rousset) SAS
0 cites - US121258992024MOS Transistor Having Substantially Parallelepiped-shaped Insulating Spacers
STMICROELECTRONICS (ROUSSET) SAS
0 cites - 0 cites
- US116409212023Process for Fabricating an Integrated Circuit Comprising a Phase of Forming Trenches in a Substrate and Corresponding Integrated Circuit
Stmicroelectronics (Rousset) SAS
0 cites