Foroozan Koushan

3 Patents

• US119961312024

  Preconditioning Operation for a Memory Cell with a Spontaneously-polarizable Memory Element

  Ferroelectric Memory GmbH

  0 cites
• US116947272023

  Memory Devices Including Heaters

  Micron Technology, Inc.

  0 cites
• US116097122023

  Write Operations to Mitigate Write Disturb

  Micron Technology, Inc.

  0 cites