12 Patents
- US124577652025Normally-off Transistor with Reduced On-state Resistance and Manufacturing Method
Stmicroelectronics S.r.l.
0 cites - US122782832025HEMT Transistor Including an Improved Gate Region and Related Manufacturing Process
STMICROELECTRONICS S.r.l.
0 cites - US122182312025HEMT Transistor Including Field Plate Regions and Manufacturing Process Thereof
Stmicroelectronics S.r.l.
0 cites - US121658712024Method for Manufacturing a Gate Terminal of a HEMT Device, and HEMT Device
Stmicroelectronics S.r.l.
0 cites - 0 cites
- 0 cites
- US120627152024HEMT Transistor with Adjusted Gate-source Distance, and Manufacturing Method Thereof
STMICROELECTRONICS S.R.L.
0 cites - US118627072024HEMT Transistor of the Normally Off Type Including a Trench Containing a Gate Region and Forming at Least One Step, and Corresponding Manufacturing Method
STMICROELECTRONICS S.R.L.
0 cites - US118549772023Gan-based, Lateral-conduction, Electronic Device with Improved Metallic Layers Layout
STMICROELECTRONICS S.R.L.
0 cites - US117990252023HEMT Transistor Including an Improved Gate Region and Related Manufacturing Process
STMICROELECTRONICS S.r.l.
0 cites - US117284042023Method of Manufacturing a HEMT Device with Reduced Gate Leakage Current, and HEMT Device
STMICROELECTRONICS S.R.L.
0 cites - US116997482023Normally-off HEMT Transistor with Selective Generation of 2DEG Channel, and Manufacturing Method Thereof
STMICROELECTRONICS S.R.L.
0 cites