Patents/Inventors

Fangfang Ren

NanjingCN7 patents

7 Patents

US125687102026
Silicon Carbide Detector and Fabrication Method Thereof
Hefei National Laboratory
0 cites
US124553912025
Reset-type Charge-sensitive Amplifying Circuit, and Method for Amplifying and Resetting Data Signal
Hefei National Laboratory
0 cites
US123928162025
Pulse Laser Irradiation Wide Bandgap Power Device
NANJING UNIVERSITY
0 cites
US123007462025
Gan HEMT Transistor with Impact Energy Release Capability for Use in Aerospace Irradiation Environment and Preparation Method Thereof
NANJING UNIVERSITY
0 cites
US122951542025
Wide Bandgap Semiconductor Structure for Irradiation Characteristic Test and Preparation Method Thereof
NANJING UNIVERSITY
0 cites
US122873602025
Gan HEMT Device for Irradiation Damage Detection and Detection and Manufacturing Method Therefor
NANJING UNIVERSITY
0 cites
US121469082024
In-situ Testing System for Semiconductor Device in Aerospace Irradiation Environment
NANJING UNIVERSITY
0 cites