5 Patents
- US126220202026Silicon Carbide MOSFET Transistor Device with Improved Characteristics and Corresponding Manufacturing Process
Stmicroelectronics S.r.l.
0 cites - US125934852026Forming an Electronic Device, Such as a JBS or MPS Diode, Based on 3c—sic, and 3c—sic Electronic Device
STMICROELECTRONICS S.r.l.
0 cites - US124262852025Contextual Formation of a Junction Barrier Diode and a Schottky Diode in a MPS Device Based on Silicon Carbide, and MPS Device
STMICROELECTRONICS S.r.l.
0 cites - US120517312024Silicon Carbide-based Electronic Device and Method of Manufacturing the Same
STMICROELECTRONICS S.R.L.
0 cites - US116997482023Normally-off HEMT Transistor with Selective Generation of 2DEG Channel, and Manufacturing Method Thereof
STMICROELECTRONICS S.R.L.
0 cites