Patents/Inventors

Fabio Pellizzer

Boise, IDUS56 patents

56 Patents

US125637462026
Trench and Pier Architectures That Provide Mechanical Support During Formation of Three-dimensional Memory Arrays
Micron Technology, Inc.
0 cites
US125370542026
Identify the Programming Mode of Memory Cells Based on Cell Statistics Obtained During Reading of the Memory Cells
Micron Technology, Inc.
0 cites
US125121462025
Decoding Architecture for Memory Devices
Micron Technology, Inc.
0 cites
US124628702025
Reading a Multi-level Memory Cell
Micron Technology, Inc.
0 cites
US124083322025
Memory Devices Having One-time-programmable Fuses And/or Antifuses Formed from Thin-film Transistors
Micron Technology, Inc.
0 cites
US123743932025
Varying-polarity Read Operations for Polarity-written Memory Cells
Micron Technology, Inc.
0 cites
US123679332025
Unipolar Programming of Memory Cells
Micron Technology, Inc.
0 cites
US123493712025
Vertical Memory Architecture
Micron Technology, Inc.
0 cites
US123361932025
Devices Including a Passive Material Between Memory Cells and Conductive Access Lines, and Related Electronic Devices
Micron Technology, Inc.
0 cites
US122833162025
Cross-point Pillar Architecture for Memory Arrays
Micron Technology, Inc.
0 cites
US122369992025
Decoder Architectures for Three-dimensional Memory Devices
Micron Technology, Inc.
0 cites
US122197822025
Folded Access Line for Memory Cell Access in a Memory Device
Micron Technology, Inc.
0 cites
US122197842025
Memory Device and Method for Manufacturing the Same
Micron Technology, Inc.
0 cites
US122198832025
Techniques for Forming Self-aligned Memory Structures
Micron Technology, Inc.
0 cites
US121760422024
Operating a Chalcogenide Memory with Vertical Word and Vertical Word Switching Elements
Micron Technology, Inc.
0 cites
US121780542024
Split Pillar Architectures for Memory Devices
Micron Technology, Inc.
0 cites
US121711052024
Memory Device with a Split Pillar Architecture
Micron Technology, Inc.
0 cites
US121484672024
Decoding for a Memory Device
Micron Technology, Inc.
0 cites
US121503172024
Memory Device and Method for Manufacturing the Same
Micron Technology, Inc.
0 cites
US121004472024
Self-selecting Memory Array with Horizontal Access Lines
Micron Technology, Inc.
0 cites
US120803592024
Identify the Programming Mode of Memory Cells During Reading of the Memory Cells
Micron Technology, Inc.
0 cites
US120825132024
Memory Cells with Asymmetrical Electrode Interfaces
Micron Technology, Inc.
0 cites
US120266012024
Stacked Artificial Neural Networks
Micron Technology, Inc.
0 cites
US119961412024
Reading a Multi-level Memory Cell
Micron Technology, Inc.
0 cites
US119230022024
Varying-polarity Read Operations for Polarity-written Memory Cells
Micron Technology, Inc.
0 cites
US119230072024
Dirty Write on Power Off
Micron Technology, Inc.
0 cites
US118941032024
Decoding Architecture for Word Line Tiles
Micron Technology, Inc.
0 cites
US118876612024
Cross-point Pillar Architecture for Memory Arrays
Micron Technology, Inc.
0 cites
US118695772024
Decoding Architecture for Memory Devices
Micron Technology, Inc.
0 cites
US118622262024
Systems and Methods for Pre-read Scan of Memory Devices
Micron Technology, Inc.
0 cites
US118480512023
Parallel Drift Cancellation
Micron Technology, Inc.
0 cites
US118171482023
Techniques for Programming a Memory Cell
Micron Technology, Inc.
0 cites
US117986202023
Apparatuses Including Multi-level Memory Cells and Methods of Operation of Same
Micron Technology, Inc.
0 cites
US117909872023
Decoding for a Memory Device
Micron Technology, Inc.
0 cites
US117695512023
Multi-level Self-selecting Memory Device
Micron Technology, Inc.
0 cites
US117638862023
Techniques to Access a Self-selecting Memory Device
Micron Technology, Inc.
0 cites
US117641462023
Microelectronic Devices with Self-aligned Interconnects, and Related Methods
Micron Technology, Inc.
0 cites
US117659122023
Three Dimensional Memory Arrays
Micron Technology, Inc.
0 cites
US117352612023
Programming Enhancement in Self-selecting Memory
Micron Technology, Inc.
0 cites
US117299992023
Capacitive Pillar Architecture for a Memory Array
Micron Technology, Inc.
0 cites
US117213942023
Polarity-written Cell Architectures for a Memory Device
Micron Technology, Inc.
0 cites
US116964542023
Three Dimensional Memory Arrays
Micron Technology, Inc.
0 cites
US116884602023
Memory Operation with Double-sided Asymmetric Decoders
Micron Technology, Inc.
0 cites
US116703672023
Two Memory Cells Sensed to Determine One Data Value
Micron Technology, Inc.
0 cites
US116640732023
Adaptively Programming Memory Cells in Different Modes to Optimize Performance
Micron Technology, Inc.
0 cites
US116476382023
Memory Device with Double Protective Liner
Intel Corporation
0 cites
US116417882023
Resistive Interface Material
Micron Technology, Inc.
0 cites
US116158542023
Identify the Programming Mode of Memory Cells During Reading of the Memory Cells
Micron Technology, Inc.
0 cites
US116160982023
Three-dimensional Memory Arrays, and Methods of Forming the Same
Micron Technology, Inc.
0 cites
US116106342023
Two Multi-level Memory Cells Sensed to Determine Multiple Data Values
Micron Technology, Inc.
0 cites
US116006652023
Cross-point Memory and Methods for Fabrication of Same
Micron Technology, Inc.
0 cites
US115876062023
Decoding Architecture for Memory Devices
Micron Technology, Inc.
0 cites
US115876352023
Selective Inhibition of Memory
Micron Technology, Inc.
0 cites
US115879792023
Three Dimensional Memory Array
Micron Technology, Inc.
0 cites
US115452162023
Mitigation of Voltage Threshold Drift Associated with Power Down Condition of Non-volatile Memory Device
Micron Technology, Inc.
0 cites
US115456252023
Tapered Memory Cell Profiles
Micron Technology, Inc.
0 cites