8 Patents
- US122727162025Capping Structure to Reduce Dark Current in Image Sensors
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120740362024Multi-layered Polysilicon and Oxygen-doped Polysilicon Design for RF SOI Trap-rich Poly Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US118240772023Capping Structure to Reduce Dark Current in Image Sensors
Taiwan Semiconductor Manufacturing Company, Ltd.
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