4 Patents
- US119490062024Power Semiconductor Device with P-contact and Doped Insulation Blocks Defining Contact Holes
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US118880612024Power Semiconductor Device Having Elevated Source Regions and Recessed Body Regions
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US116109862023Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US115814292023Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
0 cites