6 Patents
- US122197502025Memory Device Having 2-transistor Vertical Memory Cell and Separate Read and Write Gates
Micron Technology, Inc.
0 cites - US119504262024Memory Device Having 2-transistor Vertical Memory Cell and Wrapped Data Line Structure
Micron Technology, Inc.
0 cites - 0 cites
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- US117788062023Memory Device Having 2-transistor Vertical Memory Cell and Separate Read and Write Gates
Micron Technology, Inc.
0 cites - US116160732023Memory Device Having 2-transistor Vertical Memory Cell and Wrapped Data Line Structure
Micron Technology, Inc.
0 cites