3 Patents
- US121192582024Semiconductor Structure Comprising a Buried Porous Layer for RF Applications
COMMISSARIAT à L'ENERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
0 cites - US118481912023RF Substrate Structure and Method of Production
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
0 cites - US116888112023Transistor Comprising a Channel Placed Under Shear Strain and Fabrication Process
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
0 cites