7 Patents
- 0 cites
- US123566752025Planar Transistor Device Comprising at Least One Layer of a Two-dimensional (2D) Material
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US119139712024Motion-sensitive Field Effect Transistor, Motion Detection System, and Method
Globalfoundries U.S. Inc.
0 cites - US117222982023Public-private Encryption Key Generation Using Pcell Parameter Values and On-chip Physically Unclonable Function Values
Globalfoundries U.S. Inc.
0 cites - US115814302023Planar Transistor Device Comprising at Least One Layer of a Two-dimensional (2D) Material and Methods for Making Such Transistor Devices
GLOBALFOUNDRIES U.S. Inc.
0 cites - 0 cites