7 Patents
- US124713652025Semiconductor Device Including Bottom Isolation Structure for Preventing Current Leakage
Samsung Electronics Co., Ltd.
0 cites - US124531482025Integrated Circuit Device Including Field-effect Transistor with Controlled Sizes and Configurations
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US123362832025Three-dimensional Stacked Semiconductor Device Including Simplified Source/drain Contact Area
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118626792024Semiconductor Device Having Increased Contact Area Between a Source/drain Pattern and an Active Contact
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- 0 cites