Durai Vishak Nirmal Ramaswamy

74 Patents

• US126045202026

  Microelectronic Devices Including Vertical Inverters, and Electronic Systems

  Micron Technology, Inc.

  0 cites
• US125016232025

  Formation for Memory Cells

  Micron Technology, Inc.

  0 cites
• US124842082025

  Memory Device Having Tiers of 2-transistor Memory Cells and Charge Storage Structure Having Multiple Portions

  Micron Technology, Inc.

  0 cites
• US124328982025

  Memory Device Having Tiers of 2-transistor Memory Cells

  Micron Technology, Inc.

  0 cites
• US124083882025

  Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors

  Micron Technology, Inc.

  0 cites
• US123619772025

  Memory Device Having Shared Read/write Data Line for 2-transistor Vertical Memory Cell

  Micron Technology, Inc.

  0 cites
• US123493352025

  Memory Device Having 2-transistor Vertical Memory Cell and Shared Channel Region

  Micron Technology, Inc.

  0 cites
• US123002982025

  Differential Storage in Memory Arrays

  Micron Technology, Inc.

  0 cites
• US123007362025

  Transistors and Memory Arrays

  Micron Technology, Inc.

  0 cites
• US122666602025

  Memory Device Having 2-transistor Memory Cell and Access Line Plate

  Micron Technology, Inc.

  0 cites
• US122565412025

  Apparatus and Method Including Memory Device Having 2-transistor Vertical Memory Cell

  Micron Technology, Inc.

  0 cites
• US122508252025

  Integrated Assemblies and Methods of Forming Integrated Assemblies

  Micron Technology, Inc.

  0 cites
• US122323112025

  Memory Device Having 2-transistor Vertical Memory Cell

  Micron Technology, Inc.

  0 cites
• US122239942025

  Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays

  Micron Technology, Inc.

  0 cites
• US122182362025

  Devices Including Heterogeneous Channels, and Related Memory Devices, Electronic Systems, and Methods

  Micron Technology, Inc.

  0 cites
• US122197502025

  Memory Device Having 2-transistor Vertical Memory Cell and Separate Read and Write Gates

  Micron Technology, Inc.

  0 cites
• US122197582025

  Integrated Assemblies Having Transistor Body Regions Coupled to Carrier-sink-structures; and Methods of Forming Integrated Assemblies

  Micron Technology, Inc.

  0 cites
• US122197832025

  Semiconductor Devices and Hybrid Transistors

  Micron Technology, Inc.

  0 cites
• US122133212025

  Memory Device Having 2-transistor Vertical Memory Cell and Conductive Shield Structure

  Micron Technology, Inc.

  0 cites
• US121991822025

  Elevationally-extending Transistors, Devices Comprising Elevationally-extending Transistors, and Methods of Forming a Device Comprising Elevationally-extending Transistors

  Micron Technology, Inc.

  0 cites
• US121991832025

  Memory Devices Including Oxide Semiconductor

  Micron Technology, Inc.

  0 cites
• US121855522024

  Memory Arrays and Methods of Forming an Array of Memory Cells

  Micron Technology, Inc.

  0 cites
• US121503122024

  Array of Capacitors, Array of Memory Cells, Methods of Forming an Array of Capacitors, and Methods of Forming an Array of Memory Cells

  Micron Technology, Inc.

  0 cites
• US121503182024

  Memory Arrays Comprising Vertically-alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array

  Micron Technology, Inc.

  0 cites
• US121019462024

  Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies

  Micron Technology, Inc.

  0 cites
• US120803312024

  Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures

  Micron Technology, Inc.

  0 cites
• US120698532024

  Memory Device Having Shared Access Line for 2-transistor Vertical Memory Cell

  Micron Technology, Inc.

  0 cites
• US120404112024

  Devices Including Vertical Transistors, and Related Methods

  Micron Technology, Inc.

  0 cites
• US120043542024

  Memory Arrays Comprising Vertically-alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array Comprising Memory Cells Individually Comprising a Transistor and a Capacitor

  Micron Technology, Inc.

  0 cites
• US119858062024

  Vertical 2-transistor Memory Cell

  Micron Technology, Inc.

  0 cites
• US119731452024

  Devices Including Vertical Transistors, and Related Methods

  Micron Technology, Inc.

  0 cites
• US119551562024

  Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays

  Micron Technology, Inc.

  0 cites
• US119504022024

  Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures

  Micron Technology, Inc.

  0 cites
• US119504262024

  Memory Device Having 2-transistor Vertical Memory Cell and Wrapped Data Line Structure

  Micron Technology, Inc.

  0 cites
• US119421362024

  Memory Device Having Shared Read/write Access Line for 2-transistor Vertical Memory Cell

  Micron Technology, Inc.

  0 cites
• US119355742024

  Memory Cells and Methods of Forming a Capacitor Including Current Leakage Paths Having Different Total Resistances

  Micron Technology, Inc.

  0 cites
• US119374332024

  Cell Disturb Prevention Using a Leaker Device to Reduce Excess Charge from an Electronic Device

  Micron Technology, Inc.

  0 cites
• US119250312024

  Arrays of Capacitors and Arrays of Memory Cells

  Micron Technology, Inc.

  0 cites
• US119178342024

  Integrated Assemblies and Methods of Forming Integrated Assemblies

  Micron Technology, Inc.

  0 cites
• US119089132024

  Semiconductor Devices, Transistors, and Related Methods for Contacting Metal Oxide Semiconductor Devices

  Micron Technology, Inc.

  0 cites
• US119105972024

  Integrated Assemblies Having Transistor Body Regions Coupled to Carrier-sink-structures; and Methods of Forming Integrated Assemblies

  Micron Technology, Inc.

  0 cites
• US118715892024

  Memory Device Having 2-transistor Memory Cell and Access Line Plate

  Micron Technology, Inc.

  0 cites
• US118535522023

  Hybrid Memory Device Using Different Types of Capacitors

  Micron Technology, Inc.

  0 cites
• US118567902023

  Ferroelectric Capacitors

  Micron Technology, Inc.

  0 cites
• US118567992023

  Semiconductor Devices, Hybrid Transistors, and Related Methods

  Micron Technology, Inc.

  0 cites
• US118430552023

  Semiconductor Devices Comprising Transistors Having Increased Threshold Voltage and Related Methods and Systems

  Micron Technology, Inc.

  0 cites
• US118390732023

  Memory Device Having 2-transistor Vertical Memory Cell

  Micron Technology, Inc.

  0 cites
• US118324542023

  Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies

  Micron Technology, Inc.

  0 cites
• US118256622023

  Ferroelectric Capacitor, a Ferroelectric Memory Cell, an Array of Ferroelectric Memory Cells, and a Method of Forming a Ferroelectric Capacitor

  Micron Technology, Inc.

  0 cites
• US117913912023

  Inverters, and Related Memory Devices and Electronic Systems

  Micron Technology, Inc.

  0 cites
• US117769072023

  Memory Device Having 2-transistor Vertical Memory Cell and a Common Plate

  Micron Technology, Inc.

  0 cites
• US117788062023

  Memory Device Having 2-transistor Vertical Memory Cell and Separate Read and Write Gates

  Micron Technology, Inc.

  0 cites
• US117788382023

  Memory Arrays Comprising Vertically-alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array

  Micron Technology, Inc.

  0 cites
• US117695422023

  Gate-all-around Floating-gate Field Effect Memory Transistor Constructions Including Ferroelectric Gate Insulator

  Micron Technology, Inc

  0 cites
• US117354162023

  Electronic Devices Comprising Crystalline Materials and Related Memory Devices and Systems

  Micron Technology, Inc.

  0 cites
• US117279832023

  Single Word Line Gain Cell with Complementary Read Write Channel

  Micron Technology, Inc.

  0 cites
• US117157972023

  Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors

  Micron Technology, Inc.

  0 cites
• US117105132023

  Integrated Assemblies Having Ferroelectric Transistors and Methods of Forming Integrated Assemblies

  Micron Technology, Inc.

  0 cites
• US117119242023

  Methods of Forming Structures Containing Leaker-devices and Memory Configurations Incorporating Leaker-devices

  Micron Technology, Inc.

  0 cites
• US117069292023

  Memory Cells

  Micron Technology, Inc.

  0 cites
• US116950772023

  Memory Cell Comprising a Transistor That Comprises a Pair of Insulator-material Regions and an Array of Transistors

  Micron Technology, Inc.

  0 cites
• US116884502023

  Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures

  Micron Technology, Inc.

  0 cites
• US116767682023

  Methods of Incorporating Leaker Devices Into Capacitor Configurations to Reduce Cell Disturb, and Capacitor Configurations Incorporating Leaker Devices

  Micron Technology, Inc.

  0 cites
• US116658802023

  Memory Device Having 2-transistor Vertical Memory Cell and a Common Plate

  Micron Technology, Inc.

  0 cites
• US116582462023

  Devices Including Vertical Transistors, and Related Methods and Electronic Systems

  Micron Technology, Inc.

  0 cites
• US116534892023

  Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures

  Micron Technology, Inc.

  0 cites
• US116314532023

  Vertical 3D Single Word Line Gain Cell with Shared Read/write Bit Line

  Micron Technology, Inc.

  0 cites
• US116160732023

  Memory Device Having 2-transistor Vertical Memory Cell and Wrapped Data Line Structure

  Micron Technology, Inc.

  0 cites
• US116057232023

  Transistors and Memory Arrays

  Micron Technology, Inc.

  0 cites
• US116006912023

  Memory Cells Comprising Ferroelectric Material and Including Current Leakage Paths Having Different Total Resistances

  Micron Technology, Inc.

  0 cites
• US115813192023

  Memory Device Having 2-transistor Vertical Memory Cell

  Micron Technology, Inc.

  0 cites
• US115520862023

  Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Component Comprising Conductive Material and Ferroelectric Material

  Micron Technology, Inc.

  0 cites
• US115521982023

  Transistors Comprising at Least One of Gap, Gan, and Gaas

  Micron Technology, Inc.

  0 cites
• US115454922023

  Transistors, Arrays of Transistors, Arrays of Memory Cells Individually Comprising a Capacitor and an Elevationally-extending Transistor, and Methods of Forming an Array of Transistors

  Micron Technology, Inc.

  0 cites