11 Patents
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- US125989322026Methods and Structures for Improving Etch Profile of Underlying Layers
Tokyo Electron Limited
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- US124244472025Method to Selectively Etch Silicon Nitride to Silicon Oxide Using Water Crystallization
Tokyo Electron Limited
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- USD10885382025Storage Box0 cites
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- US121319142024Selective Etching with Fluorine, Oxygen and Noble Gas Containing Plasmas
Université D'orleans
0 cites - US118043802023High-throughput Dry Etching of Films Containing Silicon-oxygen Components or Silicon-nitrogen Components by Proton-mediated Catalyst Formation
Tokyo Electron Limited
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