20 Patents
- US125934312026Semiconductor Memory Device of 2T-1C Structure and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
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- US125324782026Semiconductor Devices with Improved Performance and Reliability and Manufacturing Methods for the Same
Samsung Electronics Co., Ltd.
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- US124023212025Vertical Channel Semiconductor Device with Ferroelectric-insulator Gate Stack
SAMSUNG ELECTRONICS CO., Ltd.
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- US123477782025Semiconductor Device and Electronic System Including the Same
Samsung Electronics Co., Ltd.
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- US123175042025Semiconductor Memory Device Including Vertical Cell Structure and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
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