16 Patents
- US124144792025Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-shaped Bottom Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123102452025Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabrication
Headway Technologies, Inc.
0 cites - US122455162025Self-aligned Encapsulation Hard Mask to Separate Physically Under-etched MTJ Cells to Reduce Conductive Re-deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122075672025Under-cut via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the via Etch Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121856412024Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119859052024Highly Physical Ion Resistive Spacer to Define Chemical Damage Free Sub 60nm MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119307152024Highly Physical Etch Resistive Photoresist Mask to Define Large Height Sub 30nm via and Metal Hard Mask for MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119033242024Post Treatment to Reduce Shunting Devices for Physical Etching Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118959282024Integration Scheme for Three Terminal Spin-orbit-torque (SOT) Switching Devices
Headway Technologies, Inc.
0 cites - US118568642023Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-shaped Bottom Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118189612023Self-aligned Encapsulation Hard Mask to Separate Physically Under-etched MTJ Cells to Reduce Conductive Re-deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US117858632023Under-cut via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the via Etch Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116965112023Low Resistance Mgo Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116318022023Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabrication
Headway Technologies, Inc.
0 cites - US115631712023Highly Physical Ion Resistive Spacer to Define Chemical Damage Free Sub 60 Nm MRAM Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites