22 Patents
- US126107542026Chalcogenide-based Material, and Switching Device and Memory Device That Include the Same
Samsung Electronics Co., Ltd.
0 cites - US125882182026Chalcogenide Material, Switching Device Including the Chalcogenide Material, and Memory Device Including the Switching Device
Samsung Electronics Co., Ltd.
0 cites - US125435122026Semiconductor Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124777482025Variable Resistance Memory Device and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124712922025Phase-change Memory Structure and Phase-change Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124577542025Nonvolatile Memory Device and Operating Method of the Same
Samsung Electronics Co., Ltd.
0 cites - US124313512025Method of Forming Germanium Antimony Tellurium Film
Industry Academy Cooperation Foundation Of Sejong University
0 cites - US124262642025Semiconductor Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US122549222025Memory Device Including Switching Material and Phase Change Material
Samsung Electronics Co., Ltd.
0 cites - US122324292025Semiconductor Device Including Data Storage Material Pattern
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121019422024Semiconductor Device Including Chalcogen Compound and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US120637932024Chalcogen Compound and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118188992023Semiconductor Device Including Layers with Different Chalcogen Compounds and Semiconductor Apparatus Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117441672023Semiconductor Apparatus Including a Phase Change Material Layer Having a First and a Second Chalcogen Layer
Samsung Electronics Co., Ltd.
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