5 Patents
- US124942452025Word Line-dependent Word Line and Channel Read Setup Time in First Read State of Non-volatile Memory
Sandisk Technologies, Inc.
0 cites - US120463142024NAND Memory with Different Pass Voltage Ramp Rates for Binary and Multi-state Memory
Sandisk Technologies, Inc.
0 cites - US119487092024Physically Unclonable All-printed Carbon Nanotube Network
Universities Space Research Association
0 cites - US118940512024Temperature-dependent Word Line Voltage and Discharge Rate for Refresh Read of Non-volatile Memory
SANDISK TECHNOLOGIES LLC
0 cites - US118940802024Time-tagging Read Levels of Multiple Wordlines for Open Block Data Retention
SANDISK TECHNOLOGIES LLC
0 cites