5 Patents
- US125686462026Semiconductor Device with Trench Isolation Structures in a Transition Region and Method of Manufacturing
Infineon Technologies Austria AG
0 cites - US125573602026Lateral High Voltage Semiconductor Device and Method for Forming a Lateral High Voltage Semiconductor Device
Infineon Technologies Austria AG
0 cites - US124329882025Semiconductor Device Including Substrate Layer with Floating Base Region and Gate Driver Circuit
Infineon Technologies Austria AG
0 cites - US123750812025Gate Driver Device Having a Driver Circuit for Supplying a Backgate Drive Signal
Infineon Technologies Austria AG
0 cites - 0 cites