14 Patents
- US125989372026Epitaxial Formation with Treatment and Semiconductor Devices Resulting Therefrom
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124777782025Epitaxial Structure for Source/drain Contact for Semiconductor Structure Having Fin Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124462692025Strained Nanosheets on Silicon-on-insulator Substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124396232025Field Effect Transistors with Dual Silicide Contact Structures
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123693412025Channel Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123693862025Epitaxial Layers in Source/drain Contacts and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US121488072024Backside Contact Structures with Stacked Metal Silicide Layers for Source/drain Region of Fin Field Transistors
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US120517302024Source/drain Feature to Contact Interfaces
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119425332024Channel Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US118551772023Field Effect Transistors with Dual Silicide Contact Structures
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites