Diane Lancaster

2 Patents

• US125987772026

  Low Temperature, High Germanium, High Boron Sige:b Pepi with Titanium Silicide Contacts for Ultra-low PMOS Contact Resistivity and Thermal Stability

  Intel Corporation

  0 cites
• US118698892024

  Self-aligned Gate Endcap (SAGE) Architectures Without Fin End Gap

  Intel Corporation

  0 cites