18 Patents
- US124532932025Redundant Bottom Pad and Sacrificial via Contact for Process Induced RRAM Forming
International Business Machines Corporation
0 cites - US123102622025Phase Change Memory with Encapsulated Phase Change Element
International Business Machines Corporation
0 cites - 0 cites
- US122566532025PCM Cell with Nanoheater Surrounded with Airgaps
International Business Machines Corporation
0 cites - US122258332025Oxide-based Resistive Memory Having a Plasma-exposed Bottom Electrode
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US121650232024Measuring Local CD Uniformity Using Scatterometry and Machine Learning
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US121070082024Maskless Alignment Scheme for BEOL Memory Array Manufacturing
International Business Machines Corporation
0 cites - US120330612024Capacitor-based Synapse Network Structure with Metal Shielding Between Outputs
International Business Machines Corporation
0 cites - US119569752024BEOL Fat Wire Level Ground Rule Compatible Embedded Artificial Intelligence Integration
International Business Machines Corporation
0 cites - US119375222024Confining Filament at Pillar Center for Memory Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US118791312024Use of Zmsbp12 Gene in Regulation of Drought Resistance, Plant Height, and Ear Height of Zea Mays L
BIOTECHNOLOGY RESEARCH INSTITUTE, CHINESE ACADEMY OF AGRICULTURAL SCIENCES
0 cites - 0 cites
- US118568782023High-density Resistive Random-access Memory Array with Self-aligned Bottom Electrode Contact
International Business Machines Corporation
0 cites - US118126752023Filament Confinement in Resistive Random Access Memory
International Business Machines Corporation
0 cites - 0 cites
- US116825822023Field Effect Transistor Devices with Self-aligned Source/drain Contacts and Gate Contacts Positioned Over Active Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116659872023Integrated Switch Using Stacked Phase Change Materials
International Business Machines Corporation
0 cites - US116476802023Oxide-based Resistive Memory Having a Plasma-exposed Bottom Electrode
International Business Machines Corporation
0 cites