35 Patents
- US126158412026Forksheet Transistor with Advanced Cell Height Scaling
International Business Machines Corporation
0 cites - US125686612026Self-aligned Backside Trench Epitaxy for Low Contact Resistivity
International Business Machines Corporation
0 cites - 0 cites
- US124713552025Non-overlapping Gate Conductors for GAA Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US124330202025Multi-vt Solution for Replacement Metal Gate Bonded Stacked FET
International Business Machines Corporation
0 cites - US123746152025Electronic Devices with a Low Dielectric Constant
International Business Machines Corporation
0 cites - US123639902025Upper and Lower Gate Configurations of Monolithic Stacked Finfet Transistors
International Business Machines Corporation
0 cites - US123362942025Gate-cut and Separation Techniques for Enabling Independent Gate Control of Stacked Transistors
International Business Machines Corporation
0 cites - US123175372025Reduced Parasitic Capacitance Semiconductor Device Containing at Least One Local Interconnect Passthrough Structure
International Business Machines Corporation
0 cites - US122782372025Stacked FETS with Non-shared Work Function Metals
International Business Machines Corporation
0 cites - US122781842025Vertically-stacked Field Effect Transistor Cell
International Business Machines Corporation
0 cites - US122726482025Semiconductor Device Having a Backside Power Rail
International Business Machines Corporation
0 cites - US122680312025Backside Power Rails and Power Distribution Network for Density Scaling
International Business Machines Corporation
0 cites - US121763482024Self-aligned Hybrid Substrate Stacked Gate-all-around Transistors
International Business Machines Corporation
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- US121488332024Three-dimensional, Monolithically Stacked Field Effect Transistors Formed on the Front and Backside of a Wafer
International Business Machines Corporation
0 cites - 0 cites
- US121071682024Independent Gate Length Tunability for Stacked Transistors
International Business Machines Corporation
0 cites - US120876912024Semiconductor Structures with Backside Gate Contacts
International Business Machines Corporation
0 cites - US120340052024Self-aligned Metal Gate with Poly Silicide for Vertical Transport Field-effect Transistors
International Business Machines Corporation
0 cites - 0 cites
- US119087432024Planar Devices with Consistent Base Dielectric
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
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- US118944232024Contact Resistance Reduction in Nanosheet Device Structure
International Business Machines Corporation
0 cites - US118698932024Stacked Field Effect Transistor with Wrap-around Contacts
International Business Machines Corporation
0 cites - US118175012023Three-dimensional, Monolithically Stacked Field Effect Transistors Formed on the Front and Backside of a Wafer
International Business Machines Corporation
0 cites - US117570122023Source and Drain Contact Cut Last Process to Enable Wrap-around-contact
International Business Machines Corporation
0 cites - US117497442023Fin Structure for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites - 0 cites
- US116886352023Oxygen-free Replacement Liner for Improved Transistor Performance
International Business Machines Corporation
0 cites - 0 cites
- US116581162023Interconnects on Multiple Sides of a Semiconductor Structure
International Business Machines Corporation
0 cites - US116521562023Nanosheet Transistor with Asymmetric Gate Stack
International Business Machines Corporation
0 cites