4 Patents
- US125987772026Low Temperature, High Germanium, High Boron Sige:b Pepi with Titanium Silicide Contacts for Ultra-low PMOS Contact Resistivity and Thermal Stability
Intel Corporation
0 cites - US125751702026Low Temperature, High Germanium, High Boron Sige:b Pepi with a Silicon Rich Capping Layer for Ultra-low PMOS Contact Resistivity and Thermal Stability
Intel Corporation
0 cites - US124396692025Co-deposition of Titanium and Silicon for Improved Silicon Germanium Source and Drain Contacts
Intel Corporation
0 cites - US124263422025Low Germanium, High Boron Silicon Rich Capping Layer for PMOS Contact Resistance Thermal Stability
Intel Corporation
0 cites