4 Patents
- US122307062025Transistor Device Having a Cell Field and Method of Fabricating a Gate of the Transistor Device
Infineon Technologies Austria AG
0 cites - US118483792023MOSFET Having a Drift Region with a Graded Doping Profile and Methods of Manufacturing Thereof
Infineon Technologies Austria AG
0 cites - US117642722023Semiconductor Device and Method of Manufacturing the Same
Infineon Technologies Austria AG
0 cites - US116007232023Transistor Device and Method of Fabricating a Gate of a Transistor Device
Infineon Technologies Austria AG
0 cites