David L O'meara

4 Patents

• US125989322026

  Methods and Structures for Improving Etch Profile of Underlying Layers

  Tokyo Electron Limited

  0 cites
• US124513542025

  Double Patterning Method of Patterning a Substrate

  TOKYO ELECTRON LIMITED

  0 cites
• US124008722025

  Sacrificial Capping Layer for Gate Protection

  Tokyo Electron Limited

  0 cites
• US115674072023

  Method for Globally Adjusting Spacer Critical Dimension Using Photo-active Self-assembled Monolayer

  Tokyo Electron Limited

  0 cites