David Kammerlander

7 Patents

• US125503872026

  Trench Junction Field Effect Transistor Having a Mesa Region

  Infineon Technologies Austria AG

  0 cites
• US124713022025

  Silicon Carbide Device with Trench Gate Structure

  Infineon Technologies AG

  0 cites
• US123494012025

  Semiconductor Device Including a Trench Structure Having a Trench Dielectric Structure with a Gap

  Infineon Technologies Austria AG

  0 cites
• US122951562025

  Semiconductor Device Including Trench Gate Structure and Buried Shielding Region and Method of Manufacturing

  INFINEON TECHNOLOGIES AG

  0 cites
• US120574732024

  Silicon Carbide Device with Transistor Cell and Clamp Regions in a Well Region

  Infineon Technologies AG

  0 cites
• US119619042024

  Semiconductor Device Including Trench Gate Structure and Buried Shielding Region and Method of Manufacturing

  INFINEON TECHNOLOGIES AG

  0 cites
• US118761332024

  Silicon Carbide Device with Transistor Cell and Clamp Region

  Infineon Technologies AG

  0 cites