3 Patents
- 0 cites
- US120516982024Fabrication of Gate-all-around Integrated Circuit Structures Having Molybdenum Nitride Metal Gates and Gate Dielectrics with a Dipole Layer
Intel Corporation
0 cites - US116161922023Magnetic Memory Devices with a Transition Metal Dopant at an Interface of Free Magnetic Layers and Methods of Fabrication
Intel Corporation
0 cites