8 Patents
- US125637822026Fabrication of Gate-all-around Integrated Circuit Structures Having Common Metal Gates and Having Gate Dielectrics with Differentiated Dipole Layers
Intel Corporation
0 cites - 0 cites
- US123100602025Gate-all-around Integrated Circuit Structures Having Uniform Threshold Voltages and Tight Gate Endcap Tolerances
Intel Corporation
0 cites - US122951702025Fabrication of Gate-all-around Integrated Circuit Structures Having Additive Metal Gates and Gate Dielectrics with a Dipole Layer
Intel Corporation
0 cites - US121130682024Fabrication of Gate-all-around Integrated Circuit Structures Having Additive Metal Gates
Intel Corporation
0 cites - US120516982024Fabrication of Gate-all-around Integrated Circuit Structures Having Molybdenum Nitride Metal Gates and Gate Dielectrics with a Dipole Layer
Intel Corporation
0 cites - 0 cites
- US119845062024Field Effect Transistor Having a Gate Dielectric with a Dipole Layer and Having a Gate Stressor Layer
Intel Corporation
0 cites