Patents/Inventors

Damien Radisson

BrignoudFR1 patent

2 Patents

US120338542024
Method for Manufacturing a Composite Structure Comprising a Thin Layer of Monocrystalline Sic on a Carrier Substrate of Polycrystalline Sic
Soitec
0 cites
US116886272023
Substrate for Radiofrequency Applications and Associated Manufacturing Method
Soitec
0 cites