Patents/Inventors

Daichi Dojima

SandaJP14 patents

11 Patents

US125753802026
Evaluation Method for Silicon Carbide Substrates
TOYOTA TSUSHO CORPORATION
0 cites
US125404162026
Method for Manufacturing a Semiconductor Substrate and Method for Suppressing Occurrence of Cracks in a Growth Layer
TOYOTA TSUSHO CORPORATION
0 cites
US125097952025
Method for Manufacturing Aluminum Nitride Substrate, Aluminum Nitride Substrate, and Method for Forming Aluminum Nitride Layer
TOYOTA TSUSHO CORPORATION
0 cites
US124603152025
Method for Manufacturing Semiconductor Substrates and Method for Suppressing Introduction of Displacement to Growth Layer
TOYOTA TSUSHO CORPORATION
0 cites
US123980382025
Manufacturing Method of Modified Aluminum Nitride Raw Material, Modified Aluminum Nitride Raw Material, Manufacturing Method of Aluminum Nitride Crystals, and Downfall Defect Prevention Method
TOYOTA TSUSHO CORPORATION
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US123851582025
Method for Manufacturing a Semiconductor Substrate by Forming a Growth Layer on an Underlying Substrate Having Through Holes
TOYOTA TSUSHO CORPORATION
0 cites
US123259362025
Aluminum Nitride Substrate Manufacturing Method, Aluminum Nitride Substrate, and Method of Removing Strain Layer Introduced Into Aluminum Nitride Substrate by Laser Processing
TOYOTA TSUSHO CORPORATION
0 cites
US122550732025
Silicon Carbide Substrate Manufacturing Method, Silicon Carbide Substrate, and Method of Removing Strain Layer Introduced Into Silicon Carbide Substrate by Laser Processing
TOYOTA TSUSHO CORPORATION
0 cites
US122373772025
Sic Semiconductor Substrate, And, Production Method Therefor and Production Device Therefor
TOYOTA TSUSHO CORPORATION
0 cites
US121319602024
Temperature Distribution Evaluation Method, Temperature Distribution Evaluation Device, and Soaking Range Evaluation Method
TOYOTA TSUSHO CORPORATION
0 cites
US120209282024
Sic Semiconductor Substrate, Method for Manufacturing Same, and Device for Manufacturing Same
TOYOTA TSUSHO CORPORATION
0 cites