Patents/Inventors

Daeseok Byeon

Suwon-siKR43 patents

35 Patents

US125974692026
Nonvolatile Memory Device, Storage Device Including the Same, and Method of Testing Nonvolatile Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125934522026
Memory Device Having Vertical Structure and Memory System Including the Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125866502026
Page Buffer Circuit and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125506842026
Semiconductor Device Including Detection Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125058682025
Memory Device Including Page Buffer Circuit
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124759542025
Memory Device Including Page Buffer Circuit and SSD Including the Memory Device, and Method of Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124511922025
Non-volatile Memory Device with High Voltage Region and Low Voltage Region
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124444682025
Memory Device Having Asymmetric Page Buffer Array Architecture
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124312082025
Memory Device Detecting Defect of Word Line Path and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124143102025
Semiconductor Memory Devices and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123809522025
Memory Device Including Pass Transistor Circuit
Samsung Electronics Co., Ltd.
0 cites
US123549852025
Memory Device Including Memory Chip and Peripheral Memory Chip and Method of Manufacturing the Memory Device
Samsung Electronics Co., Ltd.
0 cites
US122937912025
Memory Device Including Pass Transistor Circuit
Samsung Electronics Co., Ltd.
0 cites
US122781822025
Vertical Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US122499842025
Integrated Circuit Including Power Gating Circuit
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122118302025
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US122056432025
Memory Device Having Physical Unclonable Function and Memory System Including the Memory Device
Samsung Electronics Co., Ltd.
0 cites
US121208812024
Three-dimensional Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121004422024
Flash Memory Device Configured to Be Bonded to External Semiconductor Chip and Computing Device Including Flash Memory Device Coupled to Neural Processor Chip
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120626282024
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120025122024
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US119904752024
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119010012024
Memory Device Having Physical Unclonable Function and Memory System Including the Memory Device
Samsung Electronics Co., Ltd.
0 cites
US119010332024
Memory Device for Column Repair
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118626242024
Integrated Circuit Device with Protective Antenna Diodes Integrated Therein
Samsung Electronics Co., Ltd.
0 cites
US118372932023
Memory Device Including Pass Transistor Circuit
Samsung Electronics Co., Ltd.
0 cites
US117216552023
Memory Device Including Memory Chip and Peripheral Memory Chip and Method of Manufacturing the Memory Device
Samsung Electronics Co., Ltd.
0 cites
US117096292023
Nonvolatile Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116996932023
Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116643612023
Three-dimensional Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116370772023
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116212562023
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US115747002023
Memory Device for Column Repair
Samsung Electronics Co., Ltd.
0 cites
US115678792023
Method of Encrypting Data in Nonvolatile Memory Device, Nonvolatile Memory Device and User Device
Samsung Electronics Co., Ltd.
0 cites
US115454882023
Integrated Circuit and Semiconductor Device Including Same
Samsung Electronics Co., Ltd.
0 cites