Curtis Chun-i Hsieh

9 Patents

• US126107962026

  Structure Including Discrete Dielectric Member for Protecting First Air Gap During Forming of Second Air Gap

  GLOBALFOUNDRIES SINGAPORE PTE Ltd

  0 cites
• US125575632026

  Layer Stacks for a Resistive Memory Element

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US125001192025

  Air Gap with Inverted T-shaped Lower Portion Extending Through at Least One Metal Layer, and Related Method

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US124842342025

  Resistive Random-access Memory Elements with Lateral Sidewall Switching

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US123410582025

  Air Gap Through at Least Two Metal Layers

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US119785102024

  Memory Devices and Methods of Forming the Same

  GLOBALFOUNDRIES SINGAPORE PTE. Ltd.

  0 cites
• US118325382023

  Resistive Memory Elements with an Embedded Heating Electrode

  Globalfoundries Singapore Pte. Ltd.

  0 cites
• US116903062023

  Correlated Electron Resistive Memory Device and Integration Schemes

  GLOBALFOUNDRIES SINGAPORE PTE. Ltd.

  0 cites
• US116417892023

  Memory Cells and Methods for Forming Memory Cells

  GLOBALFOUNDRIES Singapore Pte. Ltd.

  0 cites