Cory C. Bomberger

4 Patents

• US125504012026

  Doped STI to Reduce Source/drain Diffusion for Germanium NMOS Transistors

  Intel Corporation

  0 cites
• US117356702023

  Non-selective Epitaxial Source/drain Deposition to Reduce Dopant Diffusion for Germanium NMOS Transistors

  Intel Corporation

  0 cites
• US116997562023

  Source/drain Diffusion Barrier for Germanium Nmos Transistors

  Intel Corporation

  0 cites
• US115750052023

  Asymmetrical Semiconductor Nanowire Field-effect Transistor

  Intel Corporation

  0 cites