Patents/Inventors

Cory Bomberger

College Park, MDUS24 patents

21 Patents

US125987772026
Low Temperature, High Germanium, High Boron Sige:b Pepi with Titanium Silicide Contacts for Ultra-low PMOS Contact Resistivity and Thermal Stability
Intel Corporation
0 cites
US125751702026
Low Temperature, High Germanium, High Boron Sige:b Pepi with a Silicon Rich Capping Layer for Ultra-low PMOS Contact Resistivity and Thermal Stability
Intel Corporation
0 cites
US124842722025
Source or Drain Structures with Relatively High Germanium Content
Intel Corporation
0 cites
US124396402025
Reduced Contact Resistivity with PMOS Germanium and Silicon Doped with Boron Gate All Around Transistors
Intel Corporation
0 cites
US124263422025
Low Germanium, High Boron Silicon Rich Capping Layer for PMOS Contact Resistance Thermal Stability
Intel Corporation
0 cites
US123880112025
Top Gate Recessed Channel CMOS Thin Film Transistor and Methods of Fabrication
Intel Corporation
0 cites
US122727272025
Gate-all-around Integrated Circuit Structures Having Embedded Gesnb Source or Drain Structures
Intel Corporation
0 cites
US122374202025
Fin Smoothing and Integrated Circuit Structures Resulting Therefrom
Intel Corporation
0 cites
US121599012024
Gate-all-around Integrated Circuit Structures Having Source or Drain Structures with Epitaxial Nubs
Intel Corporation
0 cites
US120274172024
Source or Drain Structures with High Germanium Concentration Capping Layer
Intel Corporation
0 cites
US120275852024
Source or Drain Structures with Low Resistivity
Intel Corporation
0 cites
US120211492024
Fin Smoothing and Integrated Circuit Structures Resulting Therefrom
Intel Corporation
0 cites
US119964042024
Three-dimensional Integrated Circuits (3dics) Including Bottom Gate MOS Transistors with Monocrystalline Channel Material
Intel Corporation
0 cites
US119905132024
Gate-all-around Integrated Circuit Structures Having Embedded Gesnb Source or Drain Structures
Intel Corporation
0 cites
US119844492024
Channel Structures with Sub-fin Dopant Diffusion Blocking Layers
Intel Corporation
0 cites
US119787842024
Gate-all-around Integrated Circuit Structures Having Germanium Nanowire Channel Structures
Intel Corporation
0 cites
US119293202024
Top Gate Recessed Channel CMOS Thin Film Transistor in the Back End of Line and Methods of Fabrication
Intel Corporation
0 cites
US118879882024
Thin Film Transistor Structures with Regrown Source and Drain
Intel Corporation
0 cites
US117356302023
Integrated Circuit Structures with Source or Drain Dopant Diffusion Blocking Layers
Intel Corporation
0 cites
US116827312023
Fin Smoothing and Integrated Circuit Structures Resulting Therefrom
Intel Corporation
0 cites
US116213252023
Source or Drain Structures with Low Resistivity
Intel Corporation
0 cites