Conghui Liu

7 Patents

• US121837952024

  Notch Shape of Trench Gate Bottom Corner for Better Breakdown Voltage of Power MOSFET and IGBT with Good Trade Off to Ron and Ox Reliability

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US121549432024

  Super Junction Power Device and Method of Making the Same

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US121549442024

  Super Junction Power Device

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US121366472024

  Super Junction Power Device and Method of Making the Same

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US119845002024

  Structure and Method of New Power MOS and IGBT with Built-in Multiple VT'S

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US117157582023

  Super Junction Power Device and Method of Making the Same

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US116770192023

  IGBT Device with Narrow Mesa and Manufacture Thereof

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites