Patents/Inventors

Clifford Drowley

Santa Clara, CAUS28 patents

25 Patents

US125988052026
Vertical Fin-based Field Effect Transistor (finfet) with Connected Fin Tips
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US125882392026
Method and System for Routing of Electrical Conductors Over Neutralized Power FETS
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US125688282026
Method and System for Fabricating Regrown Fiducials for Semiconductor Devices
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US124842942025
Vertical Fin-based Field Effect Transistor (finfet) with Neutralized Fin Tips
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US123811592025
Method and System for Fabricating Fiducials for Processing of Semiconductor Devices
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US123343522025
Method and System for Etch Depth Control in III-V Semiconductor Devices
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US122726542025
Method and System for Fabricating Fiducials Using Selective Area Growth
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US122740862025
Fabrication Method for JFET with Implant Isolation
Semiconductor Components Industries, LLC
0 cites
US122625572025
Methods and Systems to Improve Uniformity in Power FET Arrays
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US122243442025
Method and System for Control of Sidewall Orientation in Vertical Gallium Nitride Field Effect Transistors
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US121552042024
Method and System for Fin-based Voltage Clamp
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US121366452024
Coupled Guard Rings for Edge Termination
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US121259142024
Method and System for Fabrication of a Vertical Fin-based Field Effect Transistor
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US121131012024
Method and System of Junction Termination Extension in High Voltage Semiconductor Devices
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US120807572024
Method of Fabricating Super-junction Based Vertical Gallium Nitride JFET and MOSFET Power Devices
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US119964072024
Self-aligned Isolation for Self-aligned Contacts for Vertical FETS
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
0 cites
US119488012024
Method and System for Etch Depth Control in III-V Semiconductor Devices
Nexgen Power Systems, Inc.
0 cites
US119358382024
Method and System for Fabricating Fiducials Using Selective Area Growth
Nexgen Power Systems, Inc.
0 cites
US119294402024
Fabrication Method for JFET with Implant Isolation
Nexgen Power Systems, Inc.
0 cites
US119161342024
Regrowth Uniformity in Gan Vertical Devices
NEXGEN POWER SYSTEMS, Inc.
0 cites
US118240862023
Method of Fabricating Super-junction Based Vertical Gallium Nitride JFET and MOSFET Power Devices
NEXGEN POWER SYSTEMS, Inc.
0 cites
US117356712023
Method and System for Fabrication of a Vertical Fin-based Field Effect Transistor
Nexgen Power Systems, Inc.
0 cites
US117284152023
Method for Regrown Source Contacts for Vertical Gallium Nitride Based FETS
Nexgen Power Systems, Inc.
0 cites
US116372092023
JFET with Implant Isolation
NEXGEN POWER SYSTEMS, Inc.
0 cites
US115750002023
Super-junction Based Vertical Gallium Nitride JFET Power Devices
NEXGEN POWER SYSTEMS, Inc.
0 cites