7 Patents
- US122258292025Semiconductor Structure, Electrode Structure and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US121781442024Top Electrode Last Scheme for Memory Cell to Prevent Metal Redeposit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120947202024Semiconductor Structure and Manufacturing Method Thereof
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites - US120698512024Transistor, Memory and Method of Forming Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US118008182023Top Electrode Last Scheme for Memory Cell to Prevent Metal Redeposit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117422622023Integrated Circuit Having a Resistor Layer Partially Overlapping Endcaps
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115814842023Semiconductor Structure, Electrode Structure and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites