4 Patents
- US125325372026Semiconductor Device with a Deep Trench Isolation Structure and Buried Layers for Reducing Substrate Leakage Current and Avoiding Latch-up Effect, and Fabrication Method Thereof
Vanguard International Semiconductor Corporation
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- US122060292025Diode Structure and Semiconductor Device
Vanguard International Semiconductor Corporation
0 cites - US116371392023Semiconductor Device Including Light-collimating Layer and Biometric Device Using the Same
Vanguard International Semiconductor Corporation
0 cites