Patents/Inventors

Chung-lin Huang

Taoyuan CityTW18 patents

11 Patents

US126044632026
Memory Device Having Ultra-lightly Doped Region and Manufacturing Method Thereof
NANYA TECHNOLOGY CORPORATION
0 cites
US125751582026
Semiconductor Device Including Multiple Spacers and a Method for Preparing the Same
NANYA TECHNOLOGY CORPORATION
0 cites
US124842152025
Memory Cell with Improved Insulating Structure
NANYA TECHNOLOGY CORPORATION
0 cites
US124462112025
Memory Device Having Ultra-lightly Doped Region
NANYA TECHNOLOGY CORPORATION
0 cites
US123638862025
Semiconductor Device Structure Having a Channel Layer with Different Roughness
NANYA TECHNOLOGY CORPORATION
0 cites
US122257092025
Semiconductor Device and Manufacturing Method Thereof
NANYA TECHNOLOGY CORPORATION
0 cites
US122257172025
Semiconductor Device with Dielectric Structure Having Enlargemant Portion Surrounding Word Line
NANYA TECHNOLOGY CORPORATION
0 cites
US122197492025
Method of Manufacturing Semiconductor Device Structure Having a Channel Layer with Different Roughness
NANYA TECHNOLOGY CORPORATION
0 cites
US119439102024
Semiconductor Device and Manufacturing Method Thereof
NANYA TECHNOLOGY CORPORATION
0 cites
US118056402023
Manufacturing Method of a Semiconductor Device Using a Protect Layer Along a Top Sidewall of a Trench to Widen the Bottom of the Trench
NANYA TECHNOLOGY CORPORATION
0 cites
US115575492023
Method of Manufacturing Semiconductor Structure Having Dummy Pattern Around Array Area
NANYA TECHNOLOGY CORPORATION
0 cites