Chung-i Yang

6 Patents

• US123962402025

  Source/drain Silicide for Multigate Device Performance and Method of Fabricating Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US123175262025

  Multi-gate Devices and Fabricating the Same with Etch Rate Modulation

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US122307122025

  Dielectric Fin Structure

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US122182142025

  Source/drain Silicide for Multigate Device Performance and Method of Fabricating Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US119490012024

  Multi-gate Devices and Fabricating the Same with Etch Rate Modulation

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US117356652023

  Dielectric Fin Structure

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites