19 Patents
- US126044942026Gate End Cap and Boundary Placement in Transistor Structures for N-metal Oxide Semiconductor (N-MOS) Performance Tuning
Intel Corporation
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- US124023492025Gate-all-around Integrated Circuit Structures Having Devices with Channel-to-substrate Electrical Contact
Intel Corporation
0 cites - US123289202025Nanoribbon Sub-fin Isolation by Backside Si Substrate Removal Etch Selective to Source and Drain Epitaxy
Intel Corporation
0 cites - US123289472025Substrate-less Silicon Controlled Rectifier (SCR) Integrated Circuit Structures
Intel Corporation
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- US122940062025Gate-all-around Integrated Circuit Structures Having Insulator Substrate
Intel Corporation
0 cites - US122887892025Gate-all-around Integrated Circuit Structures Having Devices with Source/drain-to-substrate Electrical Contact
Intel Corporation
0 cites - US122727372025Gate-all-around Integrated Circuit Structures Having Adjacent Structures for Sub-fin Electrical Contact
Intel Corporation
0 cites - US121660312024Substrate-less Electrostatic Discharge (ESD) Integrated Circuit Structures
Intel Corporation
0 cites - US119088562024Gate-all-around Integrated Circuit Structures Having Devices with Source/drain-to-substrate Electrical Contact
Intel Corporation
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- US118376412023Gate-all-around Integrated Circuit Structures Having Adjacent Deep via Substrate Contacts for Sub-fin Electrical Contact
Intel Corporation
0 cites - US118241162023Gate-all-around Integrated Circuit Structures Having Devices with Channel-to-substrate Electrical Contact
Intel Corporation
0 cites - US117990092023Gate-all-around Integrated Circuit Structures Having Adjacent Structures for Sub-fin Electrical Contact
Intel Corporation
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